RoboMapХарактеристики
- Грузоподъёмность
- нет данных
- Вылет
- нет данных
- Повторяемость позиционирования
- нет данных
- Масса
- нет данных
- Степень защиты
- нет данных
Характеристики из источника
Строки приведены так, как их печатает производитель: без перевода, пересчёта и сравнения.
- (SA) + 004Bh
- 0000 h (Burst Mode type)
- (SA) + 001Ah
- 0000 h ((00h = none exists))
- (SA) + 0033h
- 0000 h
- (SA) + 0042h
- 0049 h
- (SA) + 0050h
- 0001 h (00 = Not Supported)
- (SA) + 0024h
- 0002 h (Max. timeout for buffer write 2N times typical)
- (SA) + 004Fh
- 03 h (= Top Boot Device with WP Protect (Top Boot))
- (SA) + 0016h
- 0000 h
- (SA) + 0013h
- 0002 h (Primary OEM Command Set)
- (SA) + 0011h
- 0052 h (Query Unique ASCII string “QRY”)
- Manufacture ID (SA) + 0000h
- 0001 h
- (SA) + 001Fh
- 0008 h (Typical timeout per single word write 2N µs)
- Issue Write to Buffer Command at sector SA
- 0025 h
- (SA) + 0054h
- 0005 h (Page Size = 2N bytes)
- (SA) + 0014h
- 0000 h
- Output short-circuit current[69]
- 100 mA
- (SA) + 004Ch
- 0003 h (01 = 4 Word Page)
- Issue Write Buffer Program Confirm at SA
- 0029 h (This command must follow the last write buffer)
- VIO
- 1.65 V (to VCC + 200 mV)
- (SA) + 0047h
- 0001 h (Sector Protect)
- (SA) +0051h
- 0000 h (Unlock Bypass)
- (SA) + 0046h
- 0002 h (Erase Suspend)
- (SA) + 0013h
- 0002 h
- Output short circuit current[74]
- 100 mA
- (SA) + 0010h
- 0051 h
- (SA) + 0028h
- 0001 h (Flash Device Interface Description)
- (SA) + 0035h
- 0000 h
- (SA) + 0049h
- 0008 h
- (SA) + 0029h
- 0000 h (capable)
- (SA) + 0037h
- 0000 h
- VIL = VSS, VCC = VCC max
- 125 °C (300)
- (SA) + 003Bh
- 0000 h
- VCC
- 2.7 V to 3.6 V
- S29GL01GS, S29GL512S, S29GL256S, S29GL128S
- 3.0 V
- (SA) + 0044h
- 0035 h (Minor version number, ASCII)
- Device ID (SA) + 000Fh
- 2201 h
- Address RA xh x555h x555h
- 0 h (0h xh xh xh Xh)
- (SA) + 0078h
- 0006 h
- (SA) + 0041h
- 0052 h
- VCC = VCC max, tASSB
- 125 °C (300)
- (SA) + 0020h
- 0009 h (Typical timeout for max)
- (SA) + 0050h
- 0001 h (Program Suspend)
- (SA) + 0015h
- 0040 h (Address for Primary Extended Table)
- (SA) +0051h
- 0000 h (00 = Not Supported)
- (SA) + 002Ah
- 0009 h (Max. number of byte in multi-byte write = 2N)
- (SA) + 004Eh
- 0000 h (ACC (Acceleration) Supply Maximum)
- (SA) + 0047h
- 0001 h (00 = Not Supported)
- (SA) + 004Dh
- 0000 h
- Device ID (SA) + 000Eh
- 2228 h (= 1 Gb)
- (SA) + 004Bh
- 0000 h (00 = Not Supported)
- (SA) + 0026h
- 0003 h (Max. timeout for full chip erase 2N times typical)
- (SA) + 0022h
- 0012 h
- (SA) + 004Ch
- 0003 h (Page Mode type)
- (SA) + 002Ch
- 0001 h
- (SA) + 0041h
- 0052 h (Query-unique ASCII string “PRI”)
- (SA) + 0048h
- 0000 h (00 = Not Supported)
- (SA) + 0023h
- 0001 h (Max. timeout for single word write 2N times typical)
- (SA) + 0040h
- 0050 h (Query-unique ASCII string “PRI”)
- (SA) + 0026h
- 0003 h
- (SA) + 003Ah
- 0000 h
- (SA) + 0079h
- 0009 h
- Addresses
- 555 h (PA PA PA)
- (SA) + 0055h
- 0006 h (Erase Suspend Timeout Maximum < 2N (µs))
- (SA) + 004Ah
- 0000 h (00 = Not Supported)
- Bits
- 2228 h (= 1 Gb)
- (SA) + 0040h
- 0050 h
- (SA) + 002Fh
- 0000 h (00FFh, 0001h, 0000h, 0002h = 512 Mb)
- (SA) + 003Ch
- 0000 h
- (SA) + 0012h
- 0059 h
- (SA) + 0052h
- 0009 h (Secured Silicon Sector (Customer OTP Area) Size 2N (bytes))
- (SA) + 0019h
- 0000 h (Address for Alternate OEM Extended Table)
- (SA) + 0017h
- 0000 h (Alternate OEM Command Set)
- (SA) + 0028h
- 0001 h
- Active Read at 5 MHz, 30 pF
- 60 mA
- (SA) + 0048h
- 0000 h (Temporary Sector Unprotect)
- Wide I/O voltage range (VIO)
- 1.65 V (to VCC)
- (SA) + 0032h
- 0000 h
- (SA) + 001Bh
- 0027 h (VCC Min. (erase/program) (D7-D4: volts, D3-D0: 100 mV))
- (SA) + 0078h
- 0006 h (Embedded Hardware Reset Timeout Maximum < 2N (µs))
- SA00
- 0000000 h (-000FFFFh)
- (SA) + 004Eh
- 0000 h
- (SA) + 0031h
- 0000 h
- (SA) + 0018h
- 0000 h ((00h = none exists))
- SA
- 0025 h (–)
- (SA) + 0034h
- 0000 h
- (SA) + 0056h
- 0006 h (Program Suspend Timeout Maximum < 2N (µs))
- (SA) + 0043h
- 0031 h (Major version number, ASCII)
- (SA) + 0025h
- 0003 h (Max. timeout per individual block erase 2N times typical)
- Erase
- 100 mA
- (SA) + 001Eh
- 0000 h (VPP Max. voltage (00h = no VPP pin present))
- (SA) + 0021h
- 0008 h (Typical timeout per individual block erase 2N ms)
- (SA) + 0015h
- 0040 h
- (SA) + 0039h
- 0000 h
- (SA) + 002Ch
- 0001 h (Number of Erase Block Regions within device)
- (SA) + 0027h Device Size = 2N byte;
- 0019 h ((256 Mb))
- Device ID (SA) + 000Eh
- 2222 h (= 256 Mb)
- (SA) + 0046h
- 0002 h
- (SA) + 0011h
- 0052 h
- (SA) + 0079h
- 0009 h (Non-Embedded Hardware Reset Timeout Maximum < 2N (µs))
- (SA) + 0036h
- 0000 h
- (SA) + 004Dh
- 0000 h (ACC (Acceleration) Supply Minimum)
- (SA) + 001Dh
- 0000 h (VPP Min. voltage (00h = no VPP pin present))
- (SA) + 0038h
- 0000 h
- SA
- 0029 h (buffer location loaded, or the operation will)
- (SA) + 002Bh
- 0000 h ((00 = not supported))
- VIH = VIO, VIL = VSS,
- 105 °C (200)
- (SA) + 0020h
- 0009 h (multi-byte program, 2N µs)
- Data
- 55 h (30h)
- Device ID (SA) + 000Eh 2228h = 1 Gb
- 2223 h (= 512 Mb)
- Program
- 100 mA
- WP# Protection
- 00 h (= Flash device without WP Protect (No Boot))
- (SA) + 004Fh
- 0004 h ((Bottom) WP# Protection)
- Description Min to VCC
- 1.65 V (to Unit)
- (SA) + 001Ch
- 0036 h (VCC Max. (erase/program) (D7-D4: volts, D3-D0: 100 mV))
- (SA) + 004Ah
- 0000 h (Simultaneous Operation)
- (SA) + 0049h
- 0008 h (Sector Protect/Unprotect Scheme)
- (SA) + 0010h
- 0051 h (Query Unique ASCII string “QRY”)
- (SA) + 0029h
- 0000 h (0 = ×8-only, 1 = ×16-only, 2 = ×8/×16 capable)
Источники
- S29GL01GS, S29GL512S, S29GL256S, S29GL128S
страница товара; от производителя; издатель: Infineon; редакция: 2026-10-03
Где в источнике: (SA) + 004Bh; (SA) + 0013h; Issue Write to Buffer Command at sector SA; Issue Write Buffer Program Confirm at SA; (SA) + 0047h; (SA) +0051h; (SA) + 0046h; Output short circuit current[74]; (SA) + 0028h; Address RA xh x555h x555h; (SA) + 0041h; (SA) + 0020h; (SA) + 0050h; (SA) + 0015h; (SA) + 004Eh; Device ID (SA) + 000Eh; (SA) + 0026h; (SA) + 0022h; (SA) + 004Ch; (SA) + 0040h; (SA) + 0048h; (SA) + 0078h; (SA) + 002Ch; (SA) + 0011h; (SA) + 0079h; (SA) + 004Dh; Device ID (SA) + 000Eh 2228h = 1 Gb; (SA) + 004Fh; (SA) + 004Ah; (SA) + 0049h; (SA) + 0010h; (SA) + 0029h
- S29GL01GS, S29GL512S, S29GL256S, S29GL128S
технический лист; от производителя; издатель: Infineon; редакция: 2026-10-03
Где в источнике: (SA) + 001Ah; (SA) + 0033h; (SA) + 0042h; (SA) + 0050h; (SA) + 0024h; (SA) + 004Fh; (SA) + 0016h; (SA) + 0011h; Manufacture ID (SA) + 0000h; (SA) + 001Fh; (SA) + 0054h; (SA) + 0014h; Output short-circuit current[69]; (SA) + 004Ch; VIO; (SA) + 0013h; (SA) + 0010h; (SA) + 0035h; (SA) + 0049h; (SA) + 0029h; (SA) + 0037h; VIL = VSS, VCC = VCC max; (SA) + 003Bh; VCC; S29GL01GS, S29GL512S, S29GL256S, S29GL128S; (SA) + 0044h; Device ID (SA) + 000Fh; (SA) + 0078h; VCC = VCC max, tASSB; (SA) +0051h; (SA) + 002Ah; (SA) + 0047h; (SA) + 004Dh; (SA) + 004Bh; (SA) + 002Ch; (SA) + 0041h; (SA) + 0048h; (SA) + 0023h; (SA) + 0026h; (SA) + 003Ah; (SA) + 0079h; Addresses; (SA) + 0055h; (SA) + 004Ah; Bits; (SA) + 0040h; (SA) + 002Fh; (SA) + 003Ch; (SA) + 0012h; (SA) + 0052h; (SA) + 0019h; (SA) + 0017h; (SA) + 0028h; Active Read at 5 MHz, 30 pF; - Wide I/O voltage range (VIO); (SA) + 0032h; (SA) + 001Bh; SA00; (SA) + 004Eh; (SA) + 0031h; (SA) + 0018h; SA; (SA) + 0034h; (SA) + 0056h; (SA) + 0043h; (SA) + 0025h; Erase; (SA) + 001Eh; (SA) + 0021h; (SA) + 0015h; (SA) + 0039h; (SA) + 0027h Device Size = 2N byte;; Device ID (SA) + 000Eh; (SA) + 0046h; (SA) + 0036h; (SA) + 001Dh; (SA) + 0038h; (SA) + 002Bh; VIH = VIO, VIL = VSS,; (SA) + 0020h; Data; Program; WP# Protection; Description Min to VCC; (SA) + 001Ch