RoboMapХарактеристики
- Грузоподъёмность
- нет данных
- Вылет
- нет данных
- Повторяемость позиционирования
- нет данных
- Масса
- нет данных
- Степень защиты
- нет данных
Характеристики из источника
Строки приведены так, как их печатает производитель: без перевода, пересчёта и сравнения.
- Temperature
- +105 °C (+105 °C +105 °C)
- Refer to “Ordering information” on page 168 for
- 07 h (xxh the model number definitions.)
- next parameter)
- 02 h (FFh RFU)
- ERRS Erase Resume
- 7 A (108)
- Start of SFDP parameter which is one of the CFI
- 1120 h
- Location zero within ID-CFI space − start of ID-CFI
- 1000 h
- tWL, tCL Clock low time[24]
- 50 % (PSCK – – 50% PSCK+ 5% ns)
- SA00
- 0000000 h (–003FFFFh Sector Starting Address)
- ... FFh RFU
- 10 h (FFh RFU)
- Dword-13
- 85 h
- offset
- 23 h (FFh Read latency cycles)
- time units (00b
- 1 ms (, 01b: 16 ms, 10b:)
- PGRS
- 8 A (X X resume may also be used during nested program)
- 注释
- 37. A (= 地址的 MSb = A23（对于 ExtAdd = 0），或 A31（对于 ExtAdd = 1 或指令 6Ch）。)
- PGRS Program Resume
- 8 A (108)
- mix of volatile and nonvolatile bits. The
- 06 h (instruction is used to enable writing)
- Location zero within JEDEC JESD216B SFDP space
- 0000 h
- State
- 00 h (= DYB for the sector addressed by the)
- Refer to “Ordering information” on page 168 for the model
- 11 h (xxh number definitions.)
- Typical time units (00b
- 1 ms (, 01b: 16)
- Block Protect Type, model dependent
- 04 h (xxh)
- (00b
- 16 ms (, 01b: 256 ms, 10b: 4 s,)
- RESET# input)
- 04 h (Hardware Reset maximum value)
- name
- 00 h (= DYB for the sector addressed by)
- ERRS
- 7 A (X Required to resume from erase suspend.)
- 擦除操作之前。在主闪式存储器阵列中编程或擦除后，不得对 D8h_O 进行编程。
- 02 h (SR2[6] : 该位控制分页编程故障地址换行点。传统的SPI设备通常使用 256 字节的分页故障指示灯，并)
- tWH, tCH Clock high time[24]
- 50 % (PSCK – – 50% PSCK+ 5% ns)
- SA00
- 0000000 h (–000FFFFh Sector Starting Address)
- 表 52 SFDP 帧头（续）
- 27 h (FFh Parameter ID MSb (FFh = JEDEC defined Parameter))
- RSFDP
- 5 A (108)
- Si
- 90 h (23 22 21 3 2 1 0)
- Output short circuit current
- 100 mA
- 内核供电电压
- 2.7 V (至 3.6 V)
- units =
- 9 * 4 s (= 36 s)
- Supply Voltage
- 2.7V - 3.6 V (2.7V - 3.6V VIO 2.7V - 3.6V)
- WVDLR Write Volatile Data Learning Register
- 4 A (108)
- VCC
- 2.7 V to 3.6 V
- Standby current – 70 100 µA
- 85 °C () SI, SCK = VCC or VSS)
- name
- 00 h (= PPB for the sector addressed by)
- Advanced Sector Protection type, model dependent
- 05 h (xxh)
- offset
- 00 h (F0h Parameter ID (RFU))
- State
- 00 h (= PPB for the sector addressed by)
- address offset address offset
- 00 h (— N/A A5h CFI Parameter ID (A5h = JEDEC SFDP))
Источники
- S25FL127S
технический лист; от производителя; издатель: Infineon; редакция: 2026-10-03
Где в источнике: Temperature; Refer to “Ordering information” on page 168 for; next parameter); ERRS Erase Resume; Start of SFDP parameter which is one of the CFI; Location zero within ID-CFI space − start of ID-CFI; tWL, tCL Clock low time[24]; SA00; ... FFh RFU; Dword-13; offset; time units (00b; PGRS; 注释：; PGRS Program Resume; mix of volatile and nonvolatile bits. The; Location zero within JEDEC JESD216B SFDP space; State; Refer to “Ordering information” on page 168 for the model; Typical time units (00b; Block Protect Type, model dependent; (00b; RESET# input); name; ERRS; 擦除操作之前。在主闪式存储器阵列中编程或擦除后，不得对 D8h_O 进行编程。; tWH, tCH Clock high time[24]; 表 52 SFDP 帧头（续）; RSFDP; Si; Output short circuit current; • 内核供电电压; units =; Supply Voltage; WVDLR Write Volatile Data Learning Register; VCC; Standby current – 70 100 µA; Advanced Sector Protection type, model dependent; address offset address offset