RoboMapХарактеристики
- Грузоподъёмность
- нет данных
- Вылет
- нет данных
- Повторяемость позиционирования
- нет данных
- Масса
- нет данных
- Степень защиты
- нет данных
Характеристики из источника
Строки приведены так, как их печатает производитель: без перевода, пересчёта и сравнения.
- CM4 sleep, CM0+ sleep Dhrystone with flash cache enabled
- 0.7–1.5 mA (1.3–2.2 mA)
- – 6.9 8.6 mA atDDD
- 60 °C
- Execute from Flash. CM4 – 0.52 0.75 mA atDDD
- 60 °C
- CM4 sleep, CM0+ sleep Dhrystone with flash cache enabled
- 0.42–0.76 mA (0.65–1.1 mA)
- – 0.9 1.5 mA atDDD
- 60 °C
- – 0.73 1 mA atDDD
- 60 °C
- – 4.8 5.8 mA atDDD
- 60 °C
- – 2.60 3.4 mA atDDD
- 85 °C
- – 0.58 0.8 mA atDDD
- 60 °C
- MHz XTAL
- 32.768 kHz (XTAL)
- – 0.76 1.1 mA atDDD
- 60 °C
- bypass)
- 85 °C (.)
- With IMO & FLL. While(1). – 2.1 2.4 mA atDDD
- 60 °C
- SID_DS_17 VOS_MED_M2 Mode 2, Medium current – 5 – mV
- 1.5 V
- – 0.62 0.9 mA atDDD
- 60 °C
- SID_DS_14 VOS_MED_M1 Mode 1, Medium current – 5 – mV
- 1.5 V
- SID_DS_16 VOS_HI_M2 Mode 2, High current – 5 – mV
- 1.5 V
- (A-weighted)
- 20 kHz (BW)
- – 2.8 3.5 mA atDDD
- 85 °C
- CM4 active, CM0+ sleep
- 0.65–1.6 mA (0.8–2.2mA)
- CM4 active, CM0+ sleep
- 0.9–6.9 mA (1.5–8.6 mA)
- – 0.59 0.8 mA atDDD
- 60 °C
- – 3.4 4.3 mA atDDD
- 85 °C
- GBW. VIN is 0.2 to VDDA –
- 1.5 V
- – 0.7 1.3 mA atDDD
- 60 °C
- – 0.73 0.95 mA atDDD
- 60 °C
- SID_DS_18 VOS_LOW_M2 Mode 2, Low current – 5 – mV
- 1.5 V
- – 0.8 1.5 mA atDDD
- 60 °C
- – 2.4 3.3 mA atDDD
- 85 °C
- – 0.65 0.8 mA atDDD
- 60 °C
- – 9 9.7 mA atDDD
- 85 °C
- VDDA < 2.2 V), (VREF =
- 1.6 V (, 2.2 V < VDDA <)
- power supply, DC to 10 MHz
- 25 °C (TA,)
- VDDA< 2.7 V), (VREF =
- 2.13 V (, VDDA > 2.7 V))
- – 2.9 3.7 mA atDDD
- 85 °C
- – 1.6 2.2 mA atDDD
- 60 °C
- SID_DS_15 VOS_LOW_M1 Mode 1, Low current – 5 – mV
- 1.5 V
- – 2.4 3.4 mA atDDD
- 60 °C
- SID_DS_13 VOS_HI_M1 Mode 1, High current – 5 – mV
- 1.5 V
- – 3 3.8 mA atDDD
- 85 °C
- – 2.7 3.6 mA atDDD
- 85 °C
- (VREF = 2.13 V, VDDA >
- 2.7 V ())
- SID214L F_SWDCLK2L
- 1.7 V ( VDDD 3.6 V – – 12 MHz)
- ratio (SINAD). VDDA = 2.7 to
- 3.6 V (, 1 Msps.)
- Src = SRSS, (VREF =
- 1.20 V (, VDDA < 2.2 V),)
- ended
- 2.2 V (),)
- – 0.7 0.95 mA atDDD
- 60 °C
- (VREF = 1.20 V, VDDA <
- 2.2 V (),)
- Mode. 10% to 90% of VDD drive strength,
- 2.7 V (< VDD 3.6 V)
- Ref. Src = SRSS, (VREF =
- 1.20 V (,)
- SID268 TLCLKDUTY LCLK duty cycle (percentage
- 40 % (– 60% % –)
- SID214 F_SWDCLK2
- 1.7 V ( VDDD 3.6 V – – 25 MHz VCCD = 1.1 V)
- – 0.8 1.4 mA atDDD
- 60 °C
- (VREF = 1.6 V,
- 2.2 V (< VDDA < 2.7 V),)
Источники
- CYB06447BZI-D54 Datasheet
технический лист; от производителя; издатель: Infineon; редакция: 2026-10-03
Где в источнике: CM4 sleep, CM0+ sleep Dhrystone with flash cache enabled; – 6.9 8.6 mA atDDD; Execute from Flash. CM4 – 0.52 0.75 mA atDDD; – 0.9 1.5 mA atDDD; – 0.73 1 mA atDDD; – 4.8 5.8 mA atDDD; – 2.60 3.4 mA atDDD; – 0.58 0.8 mA atDDD; MHz XTAL; – 0.76 1.1 mA atDDD; bypass); With IMO & FLL. While(1). – 2.1 2.4 mA atDDD; SID_DS_17 VOS_MED_M2 Mode 2, Medium current – 5 – mV; – 0.62 0.9 mA atDDD; SID_DS_14 VOS_MED_M1 Mode 1, Medium current – 5 – mV; SID_DS_16 VOS_HI_M2 Mode 2, High current – 5 – mV; (A-weighted); – 2.8 3.5 mA atDDD; CM4 active, CM0+ sleep; – 0.59 0.8 mA atDDD; – 3.4 4.3 mA atDDD; GBW. VIN is 0.2 to VDDA –; – 0.7 1.3 mA atDDD; – 0.73 0.95 mA atDDD; SID_DS_18 VOS_LOW_M2 Mode 2, Low current – 5 – mV; – 0.8 1.5 mA atDDD; – 2.4 3.3 mA atDDD; – 0.65 0.8 mA atDDD; – 9 9.7 mA atDDD; VDDA < 2.2 V), (VREF =; power supply, DC to 10 MHz; VDDA< 2.7 V), (VREF =; – 2.9 3.7 mA atDDD; – 1.6 2.2 mA atDDD; SID_DS_15 VOS_LOW_M1 Mode 1, Low current – 5 – mV; – 2.4 3.4 mA atDDD; SID_DS_13 VOS_HI_M1 Mode 1, High current – 5 – mV; – 3 3.8 mA atDDD; – 2.7 3.6 mA atDDD; (VREF = 2.13 V, VDDA >; SID214L F_SWDCLK2L; ratio (SINAD). VDDA = 2.7 to; Src = SRSS, (VREF =; ended; – 0.7 0.95 mA atDDD; (VREF = 1.20 V, VDDA <; Mode. 10% to 90% of VDD drive strength,; Ref. Src = SRSS, (VREF =; SID268 TLCLKDUTY LCLK duty cycle (percentage; SID214 F_SWDCLK2; – 0.8 1.4 mA atDDD; (VREF = 1.6 V,